Transformers for IGBT/FET
VGT15SEFD-250S4A7
|
|
Size
| Length(L) |
|
| Width(W) |
|
| Thickness(T) |
|
Electrical Characteristics
| Turns Ratio |
|
| Number of Output |
|
| Inductance |
|
| Leakage Inductance [Max.] |
|
| Withstanding Voltage [Pri-Sec] |
|
| Withstanding Voltage [Coil-Core] |
|
Other
| Operating Temp. Range |
|
| AEC-Q200 |
|
| Packing |
|
| Package Quantity |
|
| Weight |
|
Tech Info
Customer who viewed this product also viewed
Multilayer Ceramic Chip Capacitors
CGA3E3C0G2E221J080AA
Capacitance=220pF
Edc=250V
T.C.=C0G
LxWxT:1.6x0.8x0.8mm
Mid Volt. (100 to 630V)
AEC-Q200
Multilayer Ceramic Chip Capacitors
CGA5L1X7R1E106M160AE
Capacitance=10μF
Edc=25V
T.C.=X7R
LxWxT:3.2x1.6x1.6mm
Soft termination
AEC-Q200
(Ceramic Capacitors)
B37940K5331J001
(Ceramic Capacitors)
B37940K5681J001
EMI Suppression Capacitors
B32021H3472M000
0.0047 µF, 300 V rms AC
5.0m(W) x 11.0m(H) x 13.0m(L)
Capacitors for DC Link
B32726A1405K000
4.0uF, 1200 V DC
16.0mm(W) x 28.5mm(H) x 42.0mm(L)
SMD / SMT Inductors (Coils)
VLS5045EX-220M-H
L=22μH
Rated current=1.8A
L x W x T :
5 x 5 x 4.5mm
Noise Suppression Filters
VAF201610FA-281-1
|Z|=280Ω at 100MHz
Rated current=2.69A
L x W x T :
2.0mmx1.6mmx1.0mm
Chip Varistors / Ceramic Transient Voltage Suppressors
B72530E1200K062
Maximum continuous voltage=26V
Maximum Clamping Voltage (8/20μs)=54V
Transformers for IGBT/FET
B78308A2387A003
Gate-drive transformer
100μH, TR=1:1.07
