TDK’s smart aluminum nitride (AlN) multilayer substrates and packages are shifting the boundaries of high-power devices in terms of power density, heat dissipation, reliability, and most compact footprints.
The main characteristics of aluminum nitride are highest thermal conductivity compared to other ceramics and substrate materials and excellent thermal expansion coefficient which matches with silicon (Si), silicon carbide (SiC) and gallium nitride (GaN).
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Substrates for High-Power and Fast Switching Semiconductors
