Application Note Motor/Inverter Circuit Configuration Example
Motor/generator circuit configuration example
Inverter circuits that convert direct current to alternating current are used to drive motors and generators. Such circuits incorporate Insulated-Gate Bipolar Transistors (IGBT) and other semiconductor switches. Recently, Silicon Carbide (SiC) and other high-speed devices are also coming into use, operating at higher frequencies while featuring smaller dimensions. Driving a large electric motor requires voltages of 400 volts and higher. A booster circuit therefore is generally placed in front of the inverter circuit, and a configuration with two semiconductor switches is used to increase efficiency. When the motor is driven, a steep current rise occurs which requires the high-voltage line connecting the booster circuit and the inverter to be stabilized. This task is performed by a capacitor called DC LINK.ｐ>
Capacitors for DC Link/Snubber Use
The use of high-speed devices such as SiC, Gan etc. is progressing and the dimensions of inverters are shrinking, but this makes it even more important to effectively control noise. Wiring inductance can lead to high surge voltages which requires countermeasures such as suitable wiring design and snubber capacitors.
Inverter circuit inputs require a stable DC voltage at the input. Because electric motors are driven at low frequencies, a relatively large capacitance is required to absorb ripple components. Film capacitors have high allowable ripple current ratings ,making them suitable for achieving stable voltage.
|High Temperature Resistance
|Dielectric||Metallized polypropylene (MKP)||Metallized polypropylene (MKP)||Metallized polypropylene (MKP)||Metallized polypropylene (MKP)|
|Vdc||300, 450, 630, 780, 875||450, 800, 1100, 1300||630, 700, 840||450～1600|
|Capacitance range [µH]||0.47 to 270||1.5 to 480||1.0 to 50||1.5 to 170|
|Operating temperature range [℃]||105 Max.||105 Max.||125 Max.||105 Max.|
|Lead wire spacing [mm]||27.5 to 52.5||27.5 to 52.5||27.5 to 52.5||27.5 to 52.5|
|10kH current handling [A]||5 to 108||5 to 79.5||3 to 25||5 to 36.5|
|Ambient environment test conditions||40℃ / 93% RH||40℃ / 93% RH||40℃ / 93% RH rating
60℃ / 93% RH rating
|60℃ / 95% RH rating
85℃ / 85% RH rating
|56 days||56 days||1000 hrs at 40℃
500 hrs at 60℃
|1000 hrs at 60℃
1000 hrs at 60℃
CeraLink® Snubber Circuit Application Example
When an electric motor is driven, a steep current rise occurs. This generates a large ringing voltage which results in noise and can lead to withstand voltage degradation in semiconductor devices. Although CeraLink® are SMD products, they realize high withstand voltage and high capacitance. While harnessing the advantages of the SMD format to optimize the pattern layout, parasitic inductance in the wiring can be kept low. Furthermore, the ESL of the devices themselves is low, which makes it possible to reduce ringing voltage generation.
Transformers for IGBT/FET Drive
Motor drive inverter circuits and high-power converters use a bridge circuit configuration, which consists of semiconductor switches for the high voltage side and the low voltage side. A stable power supply is required for driving these semiconductor switches. The high side in particular has to be able to handle voltages up to 800 V for electric vehicle motors. A power supply that is insulated from the low side is required, and a compact, transformer with high withstand voltage is used for this purpose. Moreover, since multiple semiconductor switches are used and the gate voltage varies, causing reliability differences between devices, voltage equalization is desirable.
|Transformer type||Distributed transformers||Centralized transformers|
|Number of outputs||1 ~ 2||3 ~ 6|
|Advantages||Small size increases layout design freedom
Low weight improves vibration resistance
|Total cost is lower than distributed type.|
|Disadvantages||Higher cost per output as compared to centralized type||Larger size imposes restrictions on layout design
Variations in coupling between NS winding and NF occur more easily than in distributed type
Higher weight reduces vibration resistance
Coplanarity accuracy inferior to distributed type
Example of IGBT/FET Drive Transformer
IPM (Intelligent Power Modules) are used for high-power inverters, booster circuits, and similar. They are semiconductor components created by combining power devices such as power MOS-FETs or IGBTs with a drive circuit and an integrated self-protection function.
A power supply voltage of 15 V ±10% is required to drive an IPM. Transformers are used to provide insulation from power devices, but poor characteristics of the transformer will degrade voltage stability. The wire material is also crucial in terms of achieving the required insulation reliability. Material that can withstand high temperatures is therefore used. If space and cost are the top considerations, the choice will be an integrated transformer. By contrast, if layout design freedom and voltage stability are given priority, the choice is a distributed transformer.
- Transformers for IGBT/FET Product Information
- A comprehensive guide to information on Transformers for IGBT/FET from the TDK Group.
- CeraLink® Capacitors Product Information
- A comprehensive guide to information on CeraLink® Capacitors from the TDK Group.
- Film Capacitors Product Information
- A comprehensive guide to information on Film Capacitors from the TDK Group.